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| FJP13009 High Voltage Fast-Switching NPN Power Transistor March 2007 FJP13009 High Voltage Fast-Switching NPN Power Transistor * High Voltage Capability * High Switching Speed * Suitable for Electronic Ballast and Switching Mode Power Supply 1 TO-220 2.Collector 3.Emitter 1.Base Absolute Maximum Ratings* Symbol VCBO VCEO VEBO IC ICP IB PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current TC = 25C unless otherwise noted (notes_1) Parameter Value 700 400 9 12 24 6 100 150 -65 ~ 150 Units V V V A A A W C C Collector Dissipation (TC = 25C) Junction Temperature Storage Temperature Range * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES_1: 1) These ratings are based on a maximum junction temperature of 150C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Package Marking and Ordering Information Device Item (notes_2) FJP13009 FJP13009H2TU FJP13009TU Notes_2 : 1) The Affix "-H2" means the hFE classification. 2) The Suffix "-TU" means the Tube packing method, which can be on fairchildsemi website at http://www.fairchildsemi.com/packaging. Device Marking J13009 J130092 J13009 Package TO-220 TO-220 TO-220 Packing Method Bulk TUBE TUBE Qty(pcs) 1,200 1,000 1,000 (c)2007 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FJP13009 Rev. B FJP13009 High Voltage Fast-Switching NPN Power Transistor Electrical Characteristics Symbol VCEO(sus) IEBO hFE VCE(sat) TC = 25C unless otherwise noted Parameter Collector-Emitter Sustaining Voltage Emitter Cut-off Current * DC Current Gain * Collector-Emitter Saturation Voltage Conditions IC = 10mA, IB = 0 VEB = 9V, IC = 0 VCE = 5V, IC = 5A (hFE1) VCE = 5V, IC = 8A IC = 5A, IB = 1A IC = 8A, IB = 1.6A IC = 12A, IB = 3A IC = 5A, IB = 1A IC = 8A, IB = 1.6A VCB = 10V, f = 0.1MHz VCE = 10V, IC = 0.5A VCC = 125V, IC = 8A IB1 = - IB2 = 1.6A, RL = 15,6 Min. 400 Typ. Max 1 Units V mA 8 6 40 30 1 1.5 3 1.2 1.6 180 V V V V V pF MHz 1.1 3 0.7 s s s VBE (sat) Cob fT tON tSTG tF * Base-Emitter Saturation Voltage Output Capacitance Current Gain Bandwidth Product Turn On Time Storage Time Fall Time 4 * Pulse Test: PW 300s, Duty Cycle 2% hFE Classification Classification hFE1 H1 8 ~ 17 H2 15 ~ 28 2 FJP13009 Rev. B www.fairchildsemi.com FJP13009 High Voltage Fast-Switching NPN Power Transistor Typical Performance Characteristics VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 100 10 VCE = 5V IC = 3 IB hFE, DC CURRENT GAIN 1 VBE(sat) 10 0.1 VCE(sat) 1 0.1 1 10 100 0.01 0.1 1 10 100 IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 1000 10000 VCC=125V IC=5IB Cob[pF], CAPACITANCE tR, tD [ns], TURN ON TIME 100 1000 tR 10 100 tD, VBE(off)=5V 1 0.1 1 10 100 1000 10 0.1 1 10 100 VCB[V], COLLECTOR BASE VOLTAGE IC[A], COLLECTOR CURRENT Figure 3. Collector Output Capacitance Figure 4. Turn On Time 10000 100 tSTG, tF [ns], TURN OFF TIME VCC=125V IC=5IB s 10 IC[A], COLLECTOR CURRENT 0 10 10 s s 1m tSTG DC 1000 1 0.1 tF 100 0.1 1 10 100 0.01 1 10 100 1000 IC[A], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 5. Turn Off Time Figure 6. Forward Bias Safe Operating Area 3 FJP13009 Rev. B www.fairchildsemi.com FJP13009 High Voltage Fast-Switching NPN Power Transistor Typical Performance Characteristics (Continued) 100 120 IC[A], COLLECTOR CURRENT 10 PC[W], POWER DISSIPATION Vcc=50V, IB1=1A, IB2 = -1A L = 1mH 100 80 1 60 40 0.1 20 0.01 10 0 100 1000 10000 0 25 50 o 75 100 125 150 175 VCE[V], COLLECTOR-EMITTER VOLTAGE TC[ C], CASE TEMPERATURE Figure 7. Reverse Bias Safe Operating Area Figure 8. Power Derating 4 FJP13009 Rev. B www.fairchildsemi.com FJP13009 High Voltage Fast-Switching NPN Power Transistor Mechanical Dimensions TO-220 9.90 0.20 1.30 0.10 2.80 0.10 4.50 0.20 (8.70) o3.60 0.10 (1.70) 1.30 -0.05 +0.10 9.20 0.20 (1.46) 13.08 0.20 (1.00) (3.00) 15.90 0.20 1.27 0.10 1.52 0.10 0.80 0.10 2.54TYP [2.54 0.20] 2.54TYP [2.54 0.20] 10.08 0.30 18.95MAX. (3.70) ) (45 0.50 -0.05 +0.10 2.40 0.20 10.00 0.20 Dimensions in Millimeters 5 FJP13009 Rev. B www.fairchildsemi.com TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx Across the board. Around the world.TM ActiveArrayTM BottomlessTM Build it NowTM CoolFETTM CROSSVOLTTM CTLTM Current Transfer LogicTM DOMETM 2 E CMOSTM (R) EcoSPARK EnSignaTM FACT Quiet SeriesTM (R) FACT (R) FAST FASTrTM FPSTM (R) FRFET GlobalOptoisolatorTM GTOTM (R) HiSeCTM i-LoTM ImpliedDisconnectTM IntelliMAXTM ISOPLANARTM MICROCOUPLERTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM (R) OPTOLOGIC (R) OPTOPLANAR PACMANTM POPTM (R) Power220 (R) Power247 PowerEdgeTM PowerSaverTM (R) PowerTrench Programmable Active DroopTM (R) QFET QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM ScalarPumpTM SMART STARTTM (R) SPM STEALTHTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TCMTM (R) The Power Franchise TM TinyLogic TINYOPTOTM TinyPowerTM TinyWireTM TruTranslationTM SerDesTM (R) UHC UniFETTM VCXTM WireTM (R) TinyBoostTM TinyBuckTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Preliminary Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only. Rev. I24 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. No Identification Needed Full Production Obsolete Not In Production (c) 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com |
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